1.Description
Collector to emitter voltage VCES 360 V
Gate to emitter voltage VGES ±30 V
Collector current IC 30 A
Collector peak current ic(peak) Note1 200 A
Collector dissipation PC Note2 40 W
Junction to case thermal impedance qj-c 3.13 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
2.Features
> Trench gate and thin wafer technology (G6H-II series)
> High speed switching: tr = 80 ns typ., tf = 150 ns typ.
> Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
> Low leak current: ICES = 1 mA max.
3.Applications
MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine,
AC servomotor and general purpose.
https://www.utsource.net/ic-datasheet/RJP30H1-1863706.html
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