Product Description | ||
Name:Utsource electronic components TLP250 | ||
Brand:Infilled | ||
Specs:Unfilled | ||
Price:0.31/pcs | ||
Description The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8?lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. Features Input threshold current: IF=5mA(max.) Supply current (ICC): 11mA(max.) Supply voltage (VCC): 10?35V Output current (IO): ±1.5A (max.) Switching time (tpLH/tpHL): 1.5μs(max.) Isolation voltage: 2500Vrms(min.) UL recognized: UL1577, file No.E67349 Option (D4) type VDE approved: DIN VDE0884/06.92,certificate No.76823 Maximum operating insulation voltage: 630VPK Highest permissible over voltage: 4000VPK Creepage distance: 6.4mm(min.) Clearance: 6.4mm(min.) https://www.utsource.net/ic-datasheet/TLP250-1246449.html | ||
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