Product Description | ||
Name:Utsource electronic components RJP63F3 | ||
Brand:Infilled | ||
Specs:Unfilled | ||
Price:0.38/pcs | ||
1. Description Collector to emitter voltage VCES 630 V Gate to emitter voltage VGES ±30 V Collector current IC 40 A Collector peak current ic(peak) Note1 200 A Collector dissipation PC Note2 30 W Junction to case thermal impedance θj-c 4.17 °C/ W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C 2. Features > Trench gate and thin wafer technology (G6H series) > Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ > High speed switching tf = 100 ns typ > Low leak current ICES = 1 μA max > Isolated package TO-220FL | ||
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