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1.Description
The 2SA1075/2SA 1076 are silicon PNP general purpose, high power switching transistors fabricated with Fujitsu’s unique Ring Emitter
Transistor (RET) technology. RET devices are constructed with multiple emitters connected through diffused ballast resistors which provide
uniform current density. This structure permits the design of high power transistors with exceptional switching characteristics and frequency
response in high current applications.The 2SA1075/2SA 1076 are especially well-suited for High frequency .power amplifiers, Audio power
amplifiers, Switching regulators and DC-DC Converters. NPN complements, 2SC2525/2SC 2526, are available.
2.Features
>With MT-200 package
>Complement to type 2SC2525,2SC2526
>Fast switching speed
>Excellent safe operating area
>High frequency power amplifiers
>Audio povr amplifiers
>Switching regulators
>DC-DC converters
https://www.utsource.net/ic-datasheet/2SA1075-1550798.html
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