Product Description | ||
Name:Utsource electronic components RJP30H1DPD | ||
Brand:Infilled | ||
Specs:Unfilled | ||
Price:0.38/pcs | ||
1.Description This device is a N-channel Power MOSFETs made using the second generation of MDmesh? technology.This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 2.Features > Trench gate and thin wafer technology (G6H-II series) > High speed switching: tr = 80 ns typ., tf = 150 ns typ. > Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. > Low leak current: ICES = 1 A max. https://www.utsource.net/ic-datasheet/RJP30H1DPD-1880399.html | ||
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